IXFN180N25T

IXYS
747-IXFN180N25T
IXFN180N25T

Mfr.:

Description:
MOSFET Modules 155A 250V

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 261

Stock:
261 Can Dispatch Immediately
Factory Lead Time:
23 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
25,90 € 25,90 €
19,72 € 197,20 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
250 V
168 A
12.9 mOhms
- 20 V, + 20 V
3 V
- 55 C
+ 150 C
900 W
IXFN180N25
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 20 ns
Height: 12.22 mm
Length: 38.23 mm
Product Type: MOSFET Modules
Rise Time: 52 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: GigaMOS Power MOSFET
Typical Turn-Off Delay Time: 88 ns
Typical Turn-On Delay Time: 35 ns
Width: 25.42 mm
Unit Weight: 30 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

TARIC:
8541500000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85415001
ECCN:
EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.