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IXFN170N65X2

Name: IXYS IXFN170N65X2
Brand: IXYS
SKU: 747-IXFN170N65X2
Price: 51.9 EUR
Availability: InStock

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Mouser No:

747-IXFN170N65X2

Mfr. No:

IXFN170N65X2

Mfr.:

IXYS

Description:

MOSFET Modules 650V/170A miniBLOC SOT-227

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

IXFN170N65X2 Datasheet

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In Stock: 134

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Qty.	Unit Price	Ext. Price
	51,90 €	51,90 €
	41,62 €	416,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	170 A
Rds On - Drain-Source Resistance:	13 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.17 kW
Series:	650V Ultra Junction X2
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	6 ns
Product Type:	MOSFET Modules
Rise Time:	15 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	HiperFET
Typical Turn-Off Delay Time:	133 ns
Typical Turn-On Delay Time:	60 ns
Vr - Reverse Voltage:	100 V
Unit Weight:	30 g

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Datasheet

IXFN170N65X2 Datasheet

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Ultra Junction MOSFETs

IXYS Ultra Junction MOSFETs feature low R_DS(on) and low Q_g in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. IXYS Ultra Junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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X2-Class Power MOSFETs with HiPerFET™

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