IXFN160N30T

IXYS
747-IXFN160N30T
IXFN160N30T

Mfr.:

Description:
MOSFET Modules TRENCH HIPERFET PWR MOSFET 300V 130A

ECAD Model:
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In Stock: 14

Stock:
14
Can Dispatch Immediately
On Order:
300
Expected 8/18/2026
Factory Lead Time:
23
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
27,27 € 27,27 €
21,03 € 210,30 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
300 V
130 A
19 mOhms
- 20 V, + 20 V
5 V
- 55 C
+ 150 C
900 W
IXFN160N30
Tube
Brand: IXYS
Configuration: Single
Fall Time: 25 ns
Height: 12.22 mm
Length: 38.23 mm
Product Type: MOSFET Modules
Rise Time: 38 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: GigaMOS Power MOSFET
Typical Turn-Off Delay Time: 105 ns
Typical Turn-On Delay Time: 37 ns
Width: 25.42 mm
Unit Weight: 30 g
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TARIC:
8541900000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541900299
ECCN:
EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.