IXFH90N20X3

IXYS
747-IXFH90N20X3
IXFH90N20X3

Mfr.:

Description:
MOSFETs TO247 200V 90A N-CH X3CLASS

Datasheet:
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Learn more about IXYS IXFH90N20X3

In Stock: 218

Stock:
218
Can Dispatch Immediately
On Order:
300
Expected 4/20/2026
Factory Lead Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,81 € 8,81 €
6,29 € 62,90 €
5,33 € 639,60 €
4,95 € 2.524,50 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
200 V
90 A
12.8 mOhms
- 20 V, 20 V
2.5 V
78 nC
- 55 C
+ 150 C
390 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: KR
Country of Origin: KR
Fall Time: 13 ns
Forward Transconductance - Min: 40 S
Product Type: MOSFETs
Rise Time: 26 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 62 ns
Typical Turn-On Delay Time: 22 ns
Unit Weight: 6 g
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Attributes selected: 0

Datasheet

PCN

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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

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