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IXFH60N60X3

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See Product Specifications

Mouser No:

747-IXFH60N60X3

Mfr. No:

IXFH60N60X3

Mfr.:

IXYS

Lifecycle:

Obsolete

Datasheet:

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	51 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	625 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	18 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	76 ns
Typical Turn-On Delay Time:	35 ns