IXFH60N50P3

IXYS
747-IXFH60N50P3
IXFH60N50P3

Mfr.:

Description:
MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET

Datasheet:
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Learn more about IXYS IXFH60N50P3

In Stock: 3.017

Stock:
3.017 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
10,61 € 10,61 €
8,12 € 81,20 €
7,48 € 897,60 €
6,67 € 3.401,70 €
6,58 € 6.711,60 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
500 V
60 A
100 mOhms
- 30 V, 30 V
5 V
96 nC
- 55 C
+ 150 C
1.04 mW
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Fall Time: 8 ns
Forward Transconductance - Min: 60 S, 35 S
Product Type: MOSFETs
Rise Time: 16 ns
Series: IXFH60N50
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 6 g
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Attributes selected: 0

Datasheet

PCN

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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Qg and RDS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (Rdson), a 14 percent reduction in gate charge (Qg) and as high as a 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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