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IXFH22N50P

Name: IXYS IXFH22N50P
Brand: IXYS
SKU: 747-IXFH22N50P
Price: 7.07 EUR
Availability: InStock

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See Product Specifications

Mouser No:

747-IXFH22N50P

Mfr. No:

IXFH22N50P

Mfr.:

IXYS

Datasheet:

ECAD Model:

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More Information

Stock:: 240

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On Order:: 360

Expected 7/13/2026
Factory Lead Time:: 30

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	22 A
Rds On - Drain-Source Resistance:	270 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5.5 V
Qg - Gate Charge:	55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	350 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	21 ns
Forward Transconductance - Min:	20 S
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	IXFH22N50
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	72 ns
Typical Turn-On Delay Time:	22 ns
Unit Weight:	6 g