IXFH12N80P

IXYS
747-IXFH12N80P
IXFH12N80P

Mfr.:

Description:
MOSFETs DIODE Id12 BVdass800

Datasheet:
ECAD Model:
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Learn more about IXYS IXFH12N80P

Availability

Stock:
Non-Stocked
Factory Lead Time:
29 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 300   Multiples: 30
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,64 € 1.392,00 €
4,15 € 2.116,50 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
800 V
12 A
850 mOhms
- 30 V, 30 V
- 55 C
+ 150 C
360 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 25 ns
Forward Transconductance - Min: 18 S
Product Type: MOSFETs
Rise Time: 26 ns
Series: IXFH12N80
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 70 ns
Typical Turn-On Delay Time: 23 ns
Unit Weight: 6 g
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Attributes selected: 0

Datasheet

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TARIC:
8541500000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85415001
ECCN:
EAR99

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