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IXFA4N100Q

Name: IXYS IXFA4N100Q
Brand: IXYS
SKU: 747-IXFA4N100Q
Price: 6.66 EUR
Availability: InStock

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Mouser No:

747-IXFA4N100Q

Mfr. No:

IXFA4N100Q

Mfr.:

IXYS

Datasheet:

ECAD Model:

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1 kV
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	3 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	39 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	HyperFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	KR
Country of Origin:	KR
Fall Time:	18 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	IXFA4N100
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	4 g