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IXFA26N50P3

Name: IXYS IXFA26N50P3
Brand: IXYS
SKU: 747-IXFA26N50P3
Price: 4.12 EUR
Availability: OutOfStock

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Mouser No:

747-IXFA26N50P3

Mfr. No:

IXFA26N50P3

Mfr.:

IXYS

Description:

MOSFETs N-Channel: Power MOSFET w/Fast Diode

Datasheet:

IXFA26N50P3 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFA26N50P3

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 300 Multiples: 50

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,12 €	1.236,00 €
	3,95 €	1.975,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	240 mOhms
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Product Type:	MOSFETs
Series:	IXFA26N50P
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	4 g

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Datasheet

IXFA26N50P3 Datasheet

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Compliance Codes

TARIC:: 8541900000
CNHTS:: 8541210000
CAHTS:: 8541900000
USHTS:: 8541900080
JPHTS:: 8542900006
MXHTS:: 8541900299
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q_g and R_DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R_dson), a 14 percent reduction in gate charge (Q_g) and as high as a 20 percent increase in maximum power dissipation (P_d). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.