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IXBK55N300

Name: IXYS IXBK55N300
Brand: IXYS
SKU: 747-IXBK55N300
Price: 86.87 EUR
Availability: OutOfStock

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Mouser No:

747-IXBK55N300

Mfr. No:

IXBK55N300

Mfr.:

IXYS

Description:

IGBTs TO264 3KV 55A BIMOSFET

Datasheet:

IXBK55N300 Datasheet

ECAD Model:

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Learn more about IXYS IXBK55N300

Availability

Stock:: 0

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On Order:: 1.275

Expected 7/22/2026
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	86,87 €	86,87 €
	82,07 €	820,70 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	TO-264-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	3 kV
Collector-Emitter Saturation Voltage:	3.2 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	130 A
Pd - Power Dissipation:	625 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	Very High Voltage
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	130 A
Gate-Emitter Leakage Current:	+/- 200 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	25
Subcategory:	IGBTs
Tradename:	BIMOSFET
Unit Weight:	7,500 g

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Datasheet

IXBK55N300 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

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High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.