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IXBH42N250

Name: IXYS IXBH42N250
Brand: IXYS
SKU: 747-IXBH42N250
Price: 41.91 EUR
Availability: InStock

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Mouser No:

747-IXBH42N250

Mfr. No:

IXBH42N250

Mfr.:

IXYS

Description:

IGBTs Disc IGBT BiMSFT-VeryHiVolt TO-247AD

Datasheet:

IXBH42N250 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXBH42N250

In Stock: 234

Stock:: 234 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	41,91 €	41,91 €
	34,54 €	345,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	2.5 kV
Collector-Emitter Saturation Voltage:	3 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	104 A
Pd - Power Dissipation:	500 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	IXYS
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs

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Datasheet

IXBH42N250 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

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High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.