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IXBH42N250

Name: IXYS IXBH42N250
Brand: IXYS
SKU: 747-IXBH42N250
Price: 54.48 EUR
Availability: InStock

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Mouser No:

747-IXBH42N250

Mfr. No:

IXBH42N250

Mfr.:

IXYS

Description:

IGBTs TO247 2500V 42A HI GAIN

Datasheet:

IXBH42N250 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXBH42N250

In Stock: 124

Stock:: 124

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On Order:: 300
Factory Lead Time:: 80

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	54,48 €	54,48 €
	47,33 €	473,30 €
	39,73 €	4.767,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247AD-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	2.5 kV
Collector-Emitter Saturation Voltage:	3 V
Maximum Gate Emitter Voltage:	- 25 V, 25 V
Continuous Collector Current at 25 C:	104 A
Pd - Power Dissipation:	500 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tube
Brand:	IXYS
Product Type:	IGBT Transistors
Factory Pack Quantity:	30
Subcategory:	IGBTs

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Datasheet

IXBH42N250 Datasheet

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Medical Equipment Solutions

Littelfuse Medical Equipment Solutions provide robust designed and quality components needed to help with reliable operating and equipment up-time. These solutions include ventilators, defibrillator, and ultrasounds. Littelfuse Medical Equipment Solutions are ideal for life support systems, patient care equipment, and patient monitoring systems.

High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.