It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXBF42N300

Name: IXYS IXBF42N300
Brand: IXYS
SKU: 747-IXBF42N300
Price: 60.29 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXBF42N300

Mfr. No:

IXBF42N300

Mfr.:

IXYS

Description:

MOSFETs ISOPLUS 3KV 24A DIODE

Datasheet:

IXBF42N300 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXBF42N300

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 57 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 300 Multiples: 25

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	60,29 €	18.087,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	ISOPLUS-i4-PAK-3
Tradename:	BIMOSFET
Packaging:	Tube
Brand:	IXYS
Product Type:	MOSFETs
Factory Pack Quantity:	25
Subcategory:	Transistors
Unit Weight:	6,500 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXBF42N300 Datasheet

PCN

Product Change Notification (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

High Voltage Reverse Conducting (BiMOSFET™) IGBTs

IXYS High Voltage Series 2500V to 3600V Reverse Conducting (BiMOSFET™) IGBTs combine the strength of both MOSFETs and IGBTs. These high-voltage devices feature a positive voltage temperature coefficient of both of its saturation voltage and the forward voltage drop of its intrinsic diode, making them ideal for parallel operation. The “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high L_di/dt voltage transients from inflicting damage to the device.