IS42S83200G-6TL

ISSI
870-IS42S83200G-6TL
IS42S83200G-6TL

Mfr.:

Description:
DRAM 256M, 3.3V, SDRAM, 32Mx8, 166MHz, 54 pin TSOP II (400 mil) RoHS

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,05 € 8,05 €
7,48 € 74,80 €
7,26 € 181,50 €
7,09 € 354,50 €
6,91 € 746,28 €
6,52 € 1.408,32 €
6,50 € 3.510,00 €
6,26 € 6.760,80 €

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: DRAM
RoHS:  
SDRAM
256 Mbit
8 bit
166 MHz
TSOP-II-54
32 M x 8
5.4 ns
3 V
3.6 V
0 C
+ 70 C
IS42S83200G
Tray
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: TW
Country of Origin: CN
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 160 mA
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Attributes selected: 0

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CNHTS:
8542319090
USHTS:
8542320024
JPHTS:
854232021
KRHTS:
8542321010
MXHTS:
8542320201
ECCN:
EAR99

3.3V Single Data Rate (SDR) Synchronous DRAM

ISSI 3.3V Single Data Rate (SDR) Synchronous DRAM provides a wide selection of SDR SDRAM with densities from 16Mbit to 512Mbit in 1Mx16, 4Mx16, and 8Mx16 organizations. Each device features a single supply voltage (3.3V +/-0.3V), standard SDRAM clock timing, LVTTL compatible inputs, programmable burst length of 1, 2, 4, 8, or full page, auto-refresh and self-refresh modes. ISSI 3.3V SDR Synchronous DRAM has a programmable CAS latency of 2 or 3. Typical applications for these devices include wireless access points, base stations, routers, network storage, energy management, industrial controls, car infotainment, and automotive telematics.