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GD2X10MPS12D

Name: Navitas Semiconductor GD2X10MPS12D
Brand: GeneSiC Semiconductor
SKU: 905-GD2X10MPS12D
Price: 7.96 EUR
Availability: InStock

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Mouser No:

905-GD2X10MPS12D

Mfr. No:

GD2X10MPS12D

Mfr.:

GeneSiC Semiconductor

Description:

SiC Schottky Diodes 1200V 20A SiC Schottky MPS Diode

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

GD2X10MPS12D Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 1.290

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Quantities greater than 1290 will be subject to minimum order requirements.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	7,96 €	7,96 €
	7,16 €	71,60 €
	6,85 €	205,50 €
	6,42 €	770,40 €
	6,16 €	1.663,20 €
	5,97 €	3.582,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Navitas Semiconductor
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Configuration:	Dual
If - Forward Current:	50 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.5 V
Ifsm - Forward Surge Current:	100 A
Ir - Reverse Current:	1 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	SiC Schottky MPS
Packaging:	Tube
Brand:	GeneSiC Semiconductor
Pd - Power Dissipation:	350 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers

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Filter Document:

Datasheet

GD2X10MPS12D Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-11-21 (PDF)

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Compliance Codes

TARIC:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

4th Generation SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 4th Generation SiC Schottky MPS™ (Merged-PiN-Schottky) Diodes offer superior price-performance index, industry-leading surge current and avalanche robustness, and high quality to provide high levels of efficiency and system reliability in high-frequency switching.