It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

G3R40MT12K

Name: Navitas Semiconductor G3R40MT12K
Brand: GeneSiC Semiconductor
SKU: 905-G3R40MT12K
Price: 15.2 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

905-G3R40MT12K

Mfr. No:

G3R40MT12K

Mfr.:

GeneSiC Semiconductor

Description:

SiC MOSFETs 1200V 40mohm TO-247-4 G3R SiC MOSFET

Datasheet:

G3R40MT12K Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about GeneSiC Semiconductor G3R40MT12K

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 600

Expected 10/5/2026
Factory Lead Time:: 20

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	15,20 €	15,20 €
	13,39 €	133,90 €
	12,67 €	380,10 €
	12,22 €	1.466,40 €
	11,89 €	3.210,30 €
	11,83 €	6.033,30 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Navitas Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	2.7 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	228 W
Channel Mode:	Enhancement
Brand:	GeneSiC Semiconductor
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	16.1 S
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	22 ns
Series:	G3R
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	29 ns
Unit Weight:	6 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

G3R40MT12K Datasheet (PDF)

PCN

Product Change Notification 2026-5-5 (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SiC MOSFETs

GeneSiC Semiconductor’s G3R™ Silicon Carbide (SiC) MOSFETs offer R_DS(ON) levels from 12mΩ to 1000mΩ and robustness for efficiency and system reliability in automotive and industrial applications. These MOSFETs deliver a fast switching frequency, increased power density, reduced ringing (EMI), and a compact size. The G3R SiC MOSFETs are offered in optimized low-inductance discrete packages (SMD and through-hole). The modules are highly optimized for power system designs that require elevated efficiency levels at all operating temperatures and ultra-fast switching speeds with ultra-low losses. GeneSiC SiC MOSFETs provide faster switching and lower ON resistance than silicon-based products. Additional features include superior electric characteristics at high temperatures and significantly lower switching loss, allowing smaller peripheral components to be used.