G3F09MT12FB2-T

GeneSiC Semiconductor
905-G3F09MT12FB2-T
G3F09MT12FB2-T

Mfr.:

Description:
MOSFET Modules 1200V 9mohm Half-Bridge SiCPAK F SiC Module, TIM

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 96

Stock:
96 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
126,43 € 126,43 €

Product Attribute Attribute Value Select Attribute
Navitas Semiconductor
Product Category: MOSFET Modules
RoHS:  
SiC
Press Fit
SiCPAK
N-Channel
1.2 kV
109 A
12.5 mOhms
2.7 V
- 40 C
+ 175 C
238 W
SiCPAK F
Tray
Brand: GeneSiC Semiconductor
Configuration: Dual
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Fall Time: 29 ns
Height: 12 mm
Length: 65 mm
Product: SiC Modules
Product Type: MOSFET Modules
Rise Time: 24 ns
Factory Pack Quantity: 48
Subcategory: Discrete and Power Modules
Type: Half-Bridge
Vr - Reverse Voltage: 1.2 kV
Width: 34 mm
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

SiCPAK™ F/G 1200V High-Power Modules

GeneSiC Semiconductor SiCPAK™ F/G 1200V High-Power Modules are designed for superior performance and robustness while meeting industry-standard footprints with pin-to-pin combability. These modules are robust, high-voltage, high-efficiency SiC MOSFETs, critical for reliable, harsh-environment, high-power applications. The SiCPAK™ F/G Modules enable expanded applications ranging from 10s kW to MW in rail, EV, fast charging, industry, solar, wind, and energy storage. Epoxy-resin potting technology provides high reliability and improved power/temperature cycling.