EPC2012C

Name: EPC EPC2012C
Brand: EPC
SKU: 65-EPC2012C
Price: 3.41 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

65-EPC2012C

Mfr. No:

EPC2012C

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9

Lifecycle:

New At Mouser

Datasheet:

EPC2012C Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 12.500

Expected 7/6/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	3,41 €	3,41 €
	2,24 €	22,40 €
	1,57 €	157,00 €
	1,29 €	645,00 €
Full Reel (Order in multiples of 2500)
	1,10 €	2.750,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	EPC
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	LGA-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	5 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	6 V, - 4 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	1 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	eGaN FET
Brand:	EPC
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	Power Transistor
Product Type:	GaN FETs
Factory Pack Quantity:	2500
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Unit Weight:	2,800 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

EPC2012C Datasheet (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290040
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

EPC2012C

Mfr.: EPC

Description: GaN FETs EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9

Availability

Pricing (EUR)

Specifications

Documents (1)

Datasheet

Product Compliance

Customers Also Purchased

FEATURED PRODUCTS EPC

QuickView

An unexpected error has occurred.

Mfr.:

EPC

Description:

GaN FETs EPC eGaN FET,200 V, 100 milliohm at 5 V, LGA 1.7 x 0.9

FEATURED PRODUCTS

EPC