AS6C6416-55BINTR

Alliance Memory
913-AS6C6416-55BINTR
AS6C6416-55BINTR

Mfr.:

Description:
SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT

Datasheet:
ECAD Model:
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Learn more about Alliance Memory AS6C6416-55BINTR

Availability

Stock:
Non-Stocked
Factory Lead Time:
20 Weeks Estimated factory production time.
Minimum: 2000   Multiples: 2000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2000)
36,09 € 72.180,00 €

Alternative Packaging

Mfr. Part No.:
AS6C6416-55BIN
Packaging:
Tray
Availability:
In Stock
Price:
46,70 €
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: SRAM
RoHS:  
64 Mbit
4 M x 16
55 ns
Parallel
3.6 V
2.7 V
20 mA
- 40 C
+ 85 C
SMD/SMT
FBGA-48
Reel
Brand: Alliance Memory
Memory Type: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: AS6C6416-55
Factory Pack Quantity: 2000
Subcategory: Memory & Data Storage
Type: Asynchronous
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8542324500
CNHTS:
8542319090
CAHTS:
8542320030
USHTS:
8542320041
MXHTS:
8542320201
ECCN:
3A991.b.2.a
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
China
The country is subject to change at the time of shipment.

Low Power CMOS SRAM

Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.

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