AS6C3216A-55TINTR

Alliance Memory
913-AS6C3216A55TINTR
AS6C3216A-55TINTR

Mfr.:

Description:
SRAM 32M, 3V, 55ns 2048K x 16 Asyn SRAM

Datasheet:
ECAD Model:
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More Information
Learn more about Alliance Memory AS6C3216A-55TINTR

Availability

Stock:
Non-Stocked
Factory Lead Time:
12 Weeks Estimated factory production time.
Minimum: 1500   Multiples: 1500
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1500)
27,29 € 40.935,00 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: SRAM
RoHS:  
32 Mbit
2 M x 16
55 ns
Parallel
3.6 V
2.7 V
20 mA
- 40 C
+ 85 C
SMD/SMT
TSOP-48
Reel
Brand: Alliance Memory
Memory Type: SDR
Moisture Sensitive: Yes
Product Type: SRAM
Series: AS6C3216A-55
Factory Pack Quantity: 1500
Subcategory: Memory & Data Storage
Type: Asynchronous
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8542324500
CNHTS:
8542320000
CAHTS:
8542320030
USHTS:
8542320041
MXHTS:
8542320201
ECCN:
3A991.b.2.a
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
China
The country is subject to change at the time of shipment.

Low Power CMOS SRAM

Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.

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