AS5F31G04SND-08LIN

Alliance Memory
913-S5F31G04SND08LIN
AS5F31G04SND-08LIN

Mfr.:

Description:
NAND Flash SPI SLC NAND Flash, 1Gb, 3V, 120Mhz, Multiple IO, Industrial, 8pin LGA (8x6)

ECAD Model:
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In Stock: 323

Stock:
323 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,95 € 8,95 €
8,32 € 83,20 €
8,07 € 201,75 €
7,88 € 394,00 €
7,68 € 768,00 €
7,34 € 1.835,00 €
7,16 € 2.520,32 €
7,04 € 7.434,24 €
2.816 Quote

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: NAND Flash
RoHS:  
SMD/SMT
LGA-8
1 Gbit
Quad SPI
128 M x 8
Synchronous
8 bit
3 V
3.6 V
30 mA
- 40 C
+ 85 C
Tray
Active Read Current - Max: 30 mA
Brand: Alliance Memory
Maximum Clock Frequency: 120 MHz
Moisture Sensitive: Yes
Product Type: NAND Flash
Speed: 120 MHz
Factory Pack Quantity: 352
Subcategory: Memory & Data Storage
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Attributes selected: 0

Compliance Codes
CNHTS:
8542329090
USHTS:
8542320071
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
China
The country is subject to change at the time of shipment.

AS5F Serial Peripheral Interface (SPI) NAND Flash

Alliance Memory AS5F Serial Peripheral Interface (SPI) NAND Flash are memory devices with Single-Level Cell (SLC) NAND of the standard parallel NAND. These devices operate from 1.8V to 3V with densities from 1Gb to 8Gb and high-speed clock frequencies up to 120MHz. The AS5F SPI NAND flash devices offer increased reliability, faster boot-up, and more than 60,000 write and erase cycles in a smaller form factor. These devices provide a low-cost and low pin count solution to alternate SPI-NOR in high-density, non-volatile memory storage solutions for embedded systems. The AS5F SPI NAND flash devices feature 64x pages of one-time programmable protection, where each page consists of a data storage region and a spare area. The data storage region stores user-programmed data, and the spare area is typically used for memory management and error correction functions.