AS4C64M16D3B-12BIN

Alliance Memory
913-4C64M16D3B12BIN
AS4C64M16D3B-12BIN

Mfr.:

Description:
DRAM DDR3, 1G, 64M x 16, 1.5V, 96-ball FBGA, 800MHz, (B-die), Industrial Temp - Tray

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
190
Expected 7/14/2026
Factory Lead Time:
8
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
13,48 € 13,48 €
12,50 € 125,00 €
12,10 € 302,50 €
11,53 € 576,50 €
11,24 € 1.124,00 €
11,08 € 2.105,20 €
10,79 € 6.150,30 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR3
1 Gbit
16 bit
800 MHz
FBGA-96
64 M x 16
20 ns
1.425 V
1.575 V
- 40 C
+ 95 C
AS4C64M16D3B
Tray
Brand: Alliance Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 190
Subcategory: Memory & Data Storage
Supply Current - Max: 72 mA
Unit Weight: 1,625 g
Products found:
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Attributes selected: 0

Compliance Codes
CAHTS:
8542320020
USHTS:
8542320032
MXHTS:
8542320201
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.