AS4C64M16D1A-6BIN

Alliance Memory
913-AS4C64M16D1A6BIN
AS4C64M16D1A-6BIN

Mfr.:

Description:
DRAM DDR1, 1G, 64M X 16, 2.5V, 60-BALL BGA, 166 MHZ, INDUSTRIAL TEMP - Tray

Datasheet:
ECAD Model:
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More Information
Learn more about Alliance Memory AS4C64M16D1A-6BIN

In Stock: 5

Stock:
5 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 5 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
38,11 € 38,11 €
35,24 € 352,40 €
34,12 € 853,00 €
33,26 € 1.663,00 €
32,06 € 3.206,00 €
31,25 € 7.500,00 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR
1 Gbit
16 bit
166 MHz
FBGA-60
64 M x 16
700 ps
2.3 V
2.7 V
- 40 C
+ 85 C
AS4C64M16D1A
Tray
Brand: Alliance Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 240
Subcategory: Memory & Data Storage
Supply Current - Max: 180 mA
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8542329000
USHTS:
8542320032
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

DDR1 Synchronous DRAM

Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

An unexpected error has occurred.


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