AS4C4M16SA-5TCN

Alliance Memory
913-AS4C4M16SA-5TCN
AS4C4M16SA-5TCN

Mfr.:

Description:
DRAM SDRAM, 64Mb, 4M x 16, 3.3V, 54pin TSOP II, 200Mhz, Commerical Temp - Tray

ECAD Model:
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In Stock: 21

Stock:
21 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,49 € 3,49 €
3,27 € 32,70 €
3,16 € 79,00 €
3,10 € 155,00 €
2,98 € 321,84 €
2,92 € 630,72 €
2,88 € 1.555,20 €
2,85 € 3.078,00 €
2,72 € 7.050,24 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM
64 Mbit
16 bit
200 MHz
TSOP-II-54
4 M x 16
4.5 ns
3 V
3.6 V
0 C
+ 70 C
AS4C4M16SA
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 108
Subcategory: Memory & Data Storage
Supply Current - Max: 55 mA
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Attributes selected: 0

CAHTS:
8542320020
USHTS:
8542320002
MXHTS:
8542320201
ECCN:
EAR99

AS4C SDRAM

Alliance Memory AS4C SDRAM is high-speed CMOS synchronous DRAM containing 64Mbits, 128Mbits, or 256Mbits. They are internally configured as 4 banks of 1M, 2M, or 4M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented, accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command, which is then followed by a Read or Write command.