AS4C32M16D1A-5TANTR

Alliance Memory
913-A4C32M16D1A5TANT
AS4C32M16D1A-5TANTR

Mfr.:

Description:
DRAM 512m, 2.5V, 200Mhz 32M x 16 DDR1

Datasheet:
ECAD Model:
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More Information
Learn more about Alliance Memory AS4C32M16D1A-5TANTR

Availability

Stock:
Non-Stocked
Factory Lead Time:
16 Weeks Estimated factory production time.
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 1000)
7,62 € 7.620,00 €

Alternative Packaging

Mfr. Part No.:
AS4C32M16D1A-5TAN
Packaging:
Tray
Availability:
In Stock
Price:
11,85 €
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR
512 Mbit
16 bit
200 MHz
TSOP-II-66
32 M x 16
700 ps
2.3 V
2.7 V
- 40 C
+ 105 C
AS4C32M16D1A
Reel
Brand: Alliance Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 1000
Subcategory: Memory & Data Storage
Supply Current - Max: 108 mA
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8542320000
CAHTS:
8542320020
USHTS:
8542320028
MXHTS:
8542320201
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

DDR1 Synchronous DRAM

Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.

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