AS4C256M16D3LC-12BIN

Alliance Memory
913-256M16D3LC-12BIN
AS4C256M16D3LC-12BIN

Mfr.:

Description:
DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 800MHZ, Industrial Temp - Tray

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about Alliance Memory AS4C256M16D3LC-12BIN

In Stock: 9

Stock:
9
Can Dispatch Immediately
On Order:
7.987
Expected 10/6/2026
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
28,61 € 28,61 €
26,50 € 265,00 €
25,66 € 641,50 €
25,03 € 1.251,50 €
24,14 € 2.414,00 €
23,52 € 4.915,68 €

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
16 bit
800 MHz
FBGA-96
256 M x 16
20 ns
1.283 V
1.45 V
- 40 C
+ 95 C
Tray
Brand: Alliance Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 209
Subcategory: Memory & Data Storage
Supply Current - Max: 81 mA
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Attributes selected: 0

Datasheet

Compliance Codes
CNHTS:
8542329010
USHTS:
8542320036
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

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