AS4C256M16D3LC-12BCN

Alliance Memory
913-C256M16D3LC12BCN
AS4C256M16D3LC-12BCN

Mfr.:

Description:
DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 800MHZ, Commercial Temp - Tray

ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
627
Expected 6/2/2026
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
38,11 € 38,11 €
35,24 € 352,40 €
34,12 € 853,00 €
33,26 € 1.663,00 €
32,06 € 3.206,00 €
31,25 € 6.531,25 €

Alternative Packaging

Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
32,71 €
Min:
1

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
16 bit
800 MHz
FBGA-96
256 M x 16
20 ns
1.283 V
1.45 V
0 C
+ 95 C
Tray
Brand: Alliance Memory
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 209
Subcategory: Memory & Data Storage
Supply Current - Max: 81 mA
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Attributes selected: 0

Compliance Codes
CNHTS:
8542329000
USHTS:
8542320036
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Taiwan
Country of Diffusion:
Taiwan
The country is subject to change at the time of shipment.

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.