AAR030V120H2

APC-E
896-AAR030V120H2
AAR030V120H2

Mfr.:

Description:
SiC MOSFETs 1200V 30mR, TO-247-4L, Automotive Grade

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 300

Stock:
300 Can Dispatch Immediately
Factory Lead Time:
23 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
9,82 € 9,82 €
8,00 € 80,00 €
6,66 € 799,20 €
5,93 € 3.024,30 €
5,54 € 5.650,80 €

Product Attribute Attribute Value Select Attribute
APC-E
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
57 A
42 mOhms
- 10 V, 25 V
4.2 V
91 nC
- 55 C
+ 175 C
278 W
Enhancement
Brand: APC-E
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 7 ns
Packaging: Tube
Product: SiC MOSFETS
Product Type: SiC MOSFETS
Rise Time: 17 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 12 ns
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Attributes selected: 0

TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.