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APS12808L-3OBMX-BA

Name: AP Memory Technology APS12808L-3OBMX-BA
Brand: AP Memory
SKU: 878-APS12808L3OBMXBA
Price: 3.6 EUR
Availability: InStock

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Mouser No:

878-APS12808L3OBMXBA

Mfr. No:

APS12808L-3OBMX-BA

Mfr.:

AP Memory

Description:

DRAM IoT RAM 128Mb OPI (x8) DDR 133MHz, 3V, Ext. Temp., BGA24

Datasheet:

APS12808L-3OBMX-BA Datasheet

ECAD Model:

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In Stock: 200

Stock:: 200 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,60 €	3,60 €
	3,33 €	33,30 €
	3,23 €	80,75 €
	3,16 €	158,00 €
	3,08 €	308,00 €
	2,98 €	745,00 €
	2,91 €	1.455,00 €
	2,89 €	2.890,00 €
	2,78 €	6.950,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	AP Memory Technology
Product Category:	DRAM
RoHS:
Type:	PSRAM (Pseudo SRAM)
Memory Size:	128 Mbit
Data Bus Width:	8 bit
Maximum Clock Frequency:	133 MHz
Package/Case:	BGA-24
Organisation:	16 M x 8
Access Time:	5.5 ns
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 105 C
Series:	IoT RAM
Packaging:	Tray
Brand:	AP Memory
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	4800
Subcategory:	Memory & Data Storage
Tradename:	APMemory

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Datasheet

APS12808L-3OBMX-BA Datasheet

Certificate of Compliance (PDF)

CNHTS:: 8542329010
USHTS:: 8542320002
ECCN:: EAR99

Octal SPI (OPI & HPI) PSRAM DDRs in BGA24 Package

AP Memory Octal SPI (OPI and HPI) PSRAM DDRs in the BGA24 package feature 64Mb up to 512M densities with x8 or x16 organization. The DDRs support a maximum clock frequency of 133MHz for devices operating at 3V supply and up to 200MHz for the 1.8V supply version. The Octal SPI PSRAM DDRs offer a -40°C to 85°C default industrial grade temperature and an -40°C to 105°C extended temperature range. AP Memory Octal SPI (OPI and HPI) PSRAM DDRs are ideal in memory selection for SoC applications requiring low pin count and ultra-low power extended memory.